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Oxidation Kinetics of Nano Crystalline Tin Oxide Conductive Thin Films

[+] Author Affiliations
Mehmet Oguz Guler, Mirac Alaf, Deniz Gultekin, Hatem Akbulut, Ahmet Alp

Sakarya University, Sakarya, Turkey

Paper No. MN2008-47072, pp. 153-156; 4 pages
  • ASME 2008 2nd Multifunctional Nanocomposites and Nanomaterials International Conference
  • ASME 2008 2nd Multifunctional Nanocomposites and Nanomaterials
  • Sharm El Sheikh, Egypt, January 11–13, 2008
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4291-6 | eISBN: 1-7918-3814-5
  • Copyright © 2008 by ASME


Tin oxide was the first transparent conductor to have achieved significant commercialization. SnO2 is an n-type semiconductor with an optical band gap of about 3.6 eV in poly crystalline form. One of the main reasons for the wide use is its rather desirable characteristic of having both, high optical transmittance and high electrical conductivity. Under optimum deposition conditions, tin oxide crystallizes in the tetragonal (rutile) structure. In this study, nano crystalline thin oxide conductive thin films has been manufactured by thermal evaporation techniques onto steel substrates using metallic tin targets and oxidation kinetics have been studied after D.C. plasma oxidation by using XRD (X-Ray Diffraction). The activation energy of SnO and SnO2 from Sn phase transformations has also been studied.

Copyright © 2008 by ASME
Topics: Thin films , oxidation



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