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Characterization of (Bi0.25Sb0.75)2Te3 Deposited by Pulsed Laser Deposition

[+] Author Affiliations
Ahmed Kamal, Hassan Abu Bakr, H. El Samman, Sherif Sedky

The American University in Cairo, Cairo, Egypt

Ziyang Wang, Paolo Fiorini

IMEC, Leuven, Belgium

Paper No. MN2008-47020, pp. 33-38; 6 pages
doi:10.1115/MN2008-47020
From:
  • ASME 2008 2nd Multifunctional Nanocomposites and Nanomaterials International Conference
  • ASME 2008 2nd Multifunctional Nanocomposites and Nanomaterials
  • Sharm El Sheikh, Egypt, January 11–13, 2008
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4291-6 | eISBN: 1-7918-3814-5
  • Copyright © 2008 by ASME

abstract

The main objective of this work is to investigate the possibility of preparing bismuth telluride thin films using pulsed laser deposition. The effect of varying the deposition pressure, laser fluence, and the deposition temperature on the surface roughness, film composition, grain microstructure and electrical resistivity is analyzed using, scanning electron microscopy, atomic force microscopy, X-ray fluorescence, transmission electron microscopy, and four point probe measurements. It is demonstrated that relatively smooth films can be deposited at a laser flounce of 0.6 J/cm2 and using argon as a background gas at 10−1 mbar. On the other hand, resistivities as low as 2 mΩ.cm can be obtained by either depositing the film at 200°C, or by post-laser annealing films deposited at room temperature.

Copyright © 2008 by ASME

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