Full Content is available to subscribers

Subscribe/Learn More  >

Derivation of Position-Probability Density for the Transient Nano-Tunnel Problem in SET

[+] Author Affiliations
Sheam-Chyun Lin, Hsien-Chang Shih, Fu-Sheng Chuang, Ming-Lun Tsai, Harki Apri Yanto, Cheng-Ju Chang

National Taiwan University of Science and Technology, Taipei, Taiwan

Paper No. ESDA2010-24769, pp. 639-648; 10 pages
  • ASME 2010 10th Biennial Conference on Engineering Systems Design and Analysis
  • ASME 2010 10th Biennial Conference on Engineering Systems Design and Analysis, Volume 5
  • Istanbul, Turkey, July 12–14, 2010
  • Conference Sponsors: International
  • ISBN: 978-0-7918-4919-4 | eISBN: 978-0-7918-3877-8
  • Copyright © 2010 by ASME


This theoretical investigation intends to study the nano-tunnel problem of the single electron transistor (SET), which is one of the most important components in the nano-electronics industry. With a combined effort of quantum mechanics and similarity parameter, the partial differential equation of transient position-probability density is attained and can be applied to predict the electron’s position inside the nano tunnel. Also, an appropriate set of the initial and the boundary conditions is set up in accordance to the actual electron behavior for solving this PDE of probability density function. Thereafter, a simple, closed-form solution for the probability density is obtained and expressed in terms of the error function for a new similarity variable η. Note that this analytic similarity solution is easy to perform the calculation and suitable for any further mathematical operation, such as the optimization applications. In addition, it is shown that these predications are reasonable and in good agreement to the physical meanings, which are evaluated from both microscopic and macroscopic viewpoints. In conclusions, this is an innovative approach by using the Schrödinger equation directly to solve the nano-tunnel problem. Moreover, with the aids of this analytic position-probability-density solution, it is illustrated that the free single electron in the SET’s tunnel can only appear at some specified regions, which are defined by a dimensionless parameter η within a range of 0 ≤ η ≤ 2. This result can be served as a valuable design reference for setting the practical manufacture requirement.

Copyright © 2010 by ASME



Interactive Graphics


Country-Specific Mortality and Growth Failure in Infancy and Yound Children and Association With Material Stature

Use interactive graphics and maps to view and sort country-specific infant and early dhildhood mortality and growth failure data and their association with maternal

Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In