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NanoFIBrication of Ultra High Aspect Ratio Vias in Silicon

[+] Author Affiliations
Drew Goettler, Mehmet Su, Zayd Leseman

University of New Mexico, Albuquerque, NM

Roy Olsson, III, D. Bruce Burckel, Ihab El-Kady

Sandia National Laboratories, Albuquerque, NM

Paper No. IMECE2010-38956, pp. 561-564; 4 pages
doi:10.1115/IMECE2010-38956
From:
  • ASME 2010 International Mechanical Engineering Congress and Exposition
  • Volume 10: Micro and Nano Systems
  • Vancouver, British Columbia, Canada, November 12–18, 2010
  • Conference Sponsors: ASME
  • ISBN: 978-0-7918-4447-2
  • Copyright © 2010 by ASME

abstract

In this paper we present both experimental and theoretical results showing the effective use of material shaping to fabricate ultra-high-aspect-ratio (UHAR) vias with a focused ion beam (FIB). With this technique, one can create vias with aspect ratios of 20:1 and higher. This is achieved by placing a ‘lower sputter rate’ material on top of a ‘higher sputter rate’ material. We model the FIB as a Gaussian beam with an angular dependent sputter rate. With our model we predict a high sputter rate ratio (high/low) can achieve vias with aspect ratios near 20:1. Experimental results support this prediction. By placing a thin layer of pyrolyzed carbon on top of silicon, we fabricated UHAR vias with diameters of 75 nm.

Copyright © 2010 by ASME
Topics: Silicon

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