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Prognostic Health Monitoring of Damage Progression in Leadfree Electronics Under Sequential Exposure to Thermal Aging and Thermal Cycling

[+] Author Affiliations
Pradeep Lall, Rahul Vaidya, Vikrant More

Auburn University, Auburn, AL

Kai Goebel

NASA Ames Research Center, Moffett Field, CA

Paper No. IMECE2010-40668, pp. 289-302; 14 pages
  • ASME 2010 International Mechanical Engineering Congress and Exposition
  • Volume 4: Electronics and Photonics
  • Vancouver, British Columbia, Canada, November 12–18, 2010
  • Conference Sponsors: ASME
  • ISBN: 978-0-7918-4428-1
  • Copyright © 2010 by ASME


Deployed electronic systems may be subjected to cyclic thermo-mechanical loads during storage and subsequent to deployment. Aging has been previously shown to affect the reliability and constitutive behavior of second-level leadfree interconnects. Prognostication of accrued damage and assessment of residual life is extremely critical for ultra-high reliability systems in which the cost of failure is too high. The presented methodology uses leading indicators of failure based on micro-structural evolution of damage to identify impending failure in electronic systems subjected to sequential stresses of thermal aging and thermal cycling. The methodology has been demonstrated on area-array ball-grid array test assemblies with Sn3Ag0.5Cu interconnects subjected to thermal aging at 125°C and thermal cycling from −55 to 125°C for various lengths of time and cycles. Damage equivalency methodologies have been developed to map damage accrued in thermal aging to the reduction in thermo-mechanical cyclic life based on damage proxies. Prognostic metrics including α-λ metric, sample standard deviation, mean square error, mean absolute percentage error, average bias, relative accuracy, and cumulative relative accuracy have been used to compare the performance of the damage proxies.

Copyright © 2010 by ASME



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