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Modeling of Halide Chemical Vapor Deposition of SiC

[+] Author Affiliations
Rong Wang, Ronghui Ma

University of Maryland-Baltimore County

Govindhan Dhanaraj, Yi Chen, Michael Dudley

Stony Brook University

Paper No. IMECE2006-14381, pp. 563-568; 6 pages
doi:10.1115/IMECE2006-14381
From:
  • ASME 2006 International Mechanical Engineering Congress and Exposition
  • Heat Transfer, Volume 2
  • Chicago, Illinois, USA, November 5 – 10, 2006
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 0-7918-4785-3 | eISBN: 0-7918-3790-4
  • Copyright © 2006 by ASME

abstract

Halide chemical vapor deposition is used to grow thick SiC epilayers at high growth rate. In this paper we present simulation of HCVD process in a horizontal hot wall reactor. A reaction mechanism for Si-C-Cl-H system is proposed for deposition of SiC using SiCl4 /C3 H8 /H2 mixture. A model for transport of momentum and energy is developed to determine the gas field velocity and temperature distribution. Chemical reactions in the gas phase and on the substrate surface are incorporated into the transport model for predicting gas species transport and deposition. The effects of graphite etching are also accounted for in the model. Numerical simulation is performed to predict growth rate of the film as a function of temperature and gaseous species flow rates.

Copyright © 2006 by ASME

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