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Reactive Ion Etching of Light Emitting MEH-PPV and Conducting PEDOT:PSS Polymer Materials

[+] Author Affiliations
Brijesh Raut, David Keith Chambers, Chad B. O'Neal, Sandra Selmic

Louisiana Tech University

Paper No. IMECE2006-14997, pp. 341-344; 4 pages
doi:10.1115/IMECE2006-14997
From:
  • ASME 2006 International Mechanical Engineering Congress and Exposition
  • Electronic and Photonic Packaging, Electrical Systems Design and Photonics, and Nanotechnology
  • Chicago, Illinois, USA, November 5 – 10, 2006
  • Conference Sponsors: Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4769-1 | eISBN: 0-7918-3790-4
  • Copyright © 2006 by ASME

abstract

In this paper the selective patterning of poly [2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) and poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate) (PEDOT: PSS) based on reactive ion etching for device fabrication is examined. These polymers were anisotropically etched using RIE in a helium plasma. Results show clearly that RIE using helium gas is effective at etching the polymers from the selected areas without physical damage to the working device. Further results show the electroluminescence spectra of etched and unetched devices have almost identical emission spectra, when these devices are operated as an LED. The external quantum efficiency (EQE) for these photodetectors was calculated and EQE peak values reached at 580nm are consistent between etched devices and unetched controls. Test devices show no decrease in EQE performance from RIE.

Copyright © 2006 by ASME
Topics: Polymers , Etching

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