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Fabrication of a GaAs Microwave Probe Used for Atomic Force Microscope

[+] Author Affiliations
Yang Ju

Nagoya University, Nagoya, Aichi, Japan

Tetsuya Kobayashi, Hitoshi Soyama

Tohoku University, Sendai, Miyagi, Japan

Paper No. IPACK2007-33613, pp. 963-966; 4 pages
doi:10.1115/IPACK2007-33613
From:
  • ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference
  • ASME 2007 InterPACK Conference, Volume 1
  • Vancouver, British Columbia, Canada, July 8–12, 2007
  • Conference Sponsors: Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4277-0 | eISBN: 0-7918-3801-3
  • Copyright © 2007 by ASME

abstract

In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 7 μm high, 2.0 aspect ratio was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was obtained by using FIB fabrication. AFM topographies of a grating sample were measured by using the fabricated GaAs microwave probe and commercial Si AFM probe. The fabricated probe was found having similar capability as the commercial one.

Copyright © 2007 by ASME

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