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Dual Layer Photoresist and Back Sputtering Applied in Lift-Off Technique

[+] Author Affiliations
Lu Zhang

Peking University, Beijing, China; Changchun University of Science and Technology, Changchun, China

Le Zhang, Ying Wang, Zhenchuan Yang, Guizhen Yan

Peking University, Beijing, China

Paper No. MNC2007-21560, pp. 587-589; 3 pages
doi:10.1115/MNC2007-21560
From:
  • 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems
  • First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B
  • Sanya, Hainan, China, January 10–13, 2007
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4265-7 | eISBN: 0-7918-3794-7
  • Copyright © 2007 by ASME

abstract

Lift-off has been widely used in microfabrication process. In normal lift-off process, after photolithography and developing, a thin layer of residua will remain on the exposed substrate. To remove the residua, descum and back sputtering are required before metal sputtering. However, because of the high temperature of descum process and high energy induced by ion bombardment during back sputtering, the up inner angle of photoresist will increase in normal lift-off process. The metal films will deposit on the sidewall of the photoresist, and adhere to the substrate even after the photoresist removal. In order to overcome these problems, a lift-off process adopting dual layer photoresist is introduced in this paper, and high quality metallic pattern could be made.

Copyright © 2007 by ASME

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