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The Electronic Structure of Truncated-Conical Shaped InAs/GaAs Quantum Dot With Wetting Layers

[+] Author Affiliations
Yumin Liu, Zhongyuan Yu, Xiaomin Ren

Beijing University of Posts and Telecommunications, Beijing, China

Paper No. MNC2007-21539, pp. 575-579; 5 pages
doi:10.1115/MNC2007-21539
From:
  • 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems
  • First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B
  • Sanya, Hainan, China, January 10–13, 2007
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4265-7 | eISBN: 0-7918-3794-7
  • Copyright © 2007 by ASME

abstract

Semiconductor quantum dots have been of major interest in recent years. This has largely been simulated by progress in quantum dot growth technology, whereby self-organized quantum dots array can be achieved using Stranski-Krastanow growth mode. Quantum does material has achieved broad applications in optoelectronic devices and quantum information fields because of the unique 3-D electron confinement. Based on the 1-band effective-mass theory, a finite element technique is developed to calculate the electronic structure of conical shaped InAs/GaAs quantum dot, including the wetting layer. Using the axis-symmetry model, the 3-D effective-mass Schrödinger equation with step potential barrier can be reduced to a 2-D problem by separating variable, which greatly reduced the calculation cost. Based on the result, we found, compared without wetting layer, the wetting layer can influence the electron level. This may attribute to the increase of the confining potential width rather than the potential height. The presented finite element code can be further used to analysis the transverse or vertical coupled quantum dot molecule.

Copyright © 2007 by ASME

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