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Design and Fabrication of a High Temperature Pressure Sensor

[+] Author Affiliations
Libo Zhao, Yulong Zhao, Zhuangde Jiang

Xi’an Jiaotong University, Xi’an, China

Paper No. MNC2007-21517, pp. 557-561; 5 pages
  • 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems
  • First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B
  • Sanya, Hainan, China, January 10–13, 2007
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4265-7 | eISBN: 0-7918-3794-7
  • Copyright © 2007 by ASME


Based on Silicon on Insulator (SOI) and Micro Electro Mechanical System (MEMS) technology, a single-crystal silicon piezoresistive strain gage was fabricated and constituted by silicon substrate, a thin SiO2 layer by Separation by Implantation of Oxygen (SIMOX), an optimized boron ion implantation doping layer photo lithographed to discrete piezoresistors, stress matching Si3 N4 layer, and metallization scheme of Ti/Pt/Au as beam lead layer for connecting piezoresistors to be Wheatstone bridge configuration. A special buried SiO2 layer with the thickness of 367 nm was fabricated by the SIMOX technology, which replaced p-n junction to isolate the piezoresistors from the bulk silicon substrate, so this kind of single-crystal silicon strain gage can be used in many harsh fields under high temperature up to 350°C. By the single-crystal silicon strain gage packaged on the metallic circular flat diaphragm, and along with other thermal treatments and compensating methods, a high temperature pressure sensor has been developed with the pressure range of 0–120 MPa under high temperature above 200°C. The testing results show that the sensor has good static performances under 200°C and fine dynamic characteristics to meet the requirements of the modern industry, such as petroleum and chemistry, mobile industry, military industry, wind tunnels, materials processing.

Copyright © 2007 by ASME



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