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Fabrication and Test of PECVD SiC Resonator

[+] Author Affiliations
Yu Wang, Hui Guo, Haixia Zhang, Guobing Zhang, Zhihong Li

Peking University, Beijing, China

Paper No. MNC2007-21240, pp. 455-458; 4 pages
doi:10.1115/MNC2007-21240
From:
  • 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems
  • First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B
  • Sanya, Hainan, China, January 10–13, 2007
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4265-7 | eISBN: 0-7918-3794-7
  • Copyright © 2007 by ASME

abstract

This paper utilized SiC thin film deposited by low temperature PECVD to fabricate resonator at 300°C, following by annealing and doping to release its stress and improve its electronics contact. The test results show that, the frequency of PECVD SiC resonator is among 60–150KHz. The Q value of resonator was estimated according to the tested frequency-amplitude curve, is about 10±3. The ability of SiC resonators in erosion environment was also studied, under 5mins etching in KOH solution, the whole structure are kept very well. Therefore, this kind PECVD SiC resonator not only can be used widely in harsh environment, such as, high temperature, erosion and high pressure, but also can integrated with CMOS process, release the integration manufacturing of circuit and devices in micro-scale.

Copyright © 2007 by ASME
Topics: Manufacturing

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