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Micromachined Pressure Sensor Based on GaAs/AlAs/InxGa1−xAs Resonant Tunneling Effect

[+] Author Affiliations
Wendong Zhang, Jian Wang, Chenyang Xue, Jijun Xiong, Jun Liu, Zhaomin Tong

North University of China, Taiyuan, Shanxi, China

Paper No. MNC2007-21226, pp. 451-454; 4 pages
doi:10.1115/MNC2007-21226
From:
  • 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems
  • First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B
  • Sanya, Hainan, China, January 10–13, 2007
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4265-7 | eISBN: 0-7918-3794-7
  • Copyright © 2007 by ASME

abstract

This paper reports a novel micromachined pressure sensor based on GaAs/AlAs/Inx Ga1−x As resonant tunneling effect. The 20 μm×20 μm GaAs/AlAs/Inx Ga1−x As resonant tunneling structure (RTS) is incorporated in a 7 μm-thick, 740 μm-diameter GaAs circular membrane and the fabrication technology of the membrane is based upon the micromachined control holes technology. The pressure sensor is packaged hermetically, and the experimental results show that the current-voltage characteristic of RTS is a function of the external pressure, and the resonance peak voltage is linearly dependent on the pressure, the linear sensitivity is up to 0.37mV/KPa.

Copyright © 2007 by ASME

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