0

Full Content is available to subscribers

Subscribe/Learn More  >

A 2.4-GHz 0.18μm Full-CMOS Single-Stage Class-E Power Amplifier With Temperature Effect for ISM Band Wireless Communication

[+] Author Affiliations
Mu-Chun Wang

National Taipei University of Technology, Taipei, Taiwan, R.O.C.; Ming Hsin University of Science & Technology, Hsin-Chu, Taiwan, R.O.C.

Zhen-Ying Hsieh, Shuang-Yuan Chen, Heng-Sheng Huang

National Taipei University of Technology, Taipei, Taiwan, R.O.C.

Chieu-Ying Hsu

Ming Hsin University of Science & Technology, Hsin-Chu, Taiwan, R.O.C.

Paper No. MNC2007-21085, pp. 311-314; 4 pages
doi:10.1115/MNC2007-21085
From:
  • 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems
  • First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B
  • Sanya, Hainan, China, January 10–13, 2007
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4265-7 | eISBN: 0-7918-3794-7
  • Copyright © 2007 by ASME

abstract

In this paper, we present a single-stage class-E power amplifier with multiple-gated shape as well as 0.18μm complementary metal-oxide-semiconductor (CMOS) process for 2.4GHz Industry-Science-Medicine (ISM) band. This power amplifier is able to be easily integrated into the system-on-chip (SoC) circuit. For the competition of lower cost and high integration in marketing concern, CMOS technology is fundamentally better than GaAs technology. We adopt the Advanced Design System software in circuit simulation coming from Agilent Company through the Chip Implementation Center (CIC) channel plus TSMC 0.18 μm device models. The simulation results with temperature effect, show the good performance such as an output power achievement of +22dBm under a 1.8V supply voltage; the power-added efficiency (PAE) is over 30%; the output impedance (S22 ) and the input impedance (S11 ) are fully lower than −15dB; the power gain (S21 ) is +11dB; the inverse isolation (S12 ) is below −26dB. This amplifier reaches its 1-dB compression point at an output level of 16.5dBm related to the input power 6.5dBm position. The output power with temperature variation from 0°C to 125°C depicts an acceptable spec. range, too.

Copyright © 2007 by ASME

Figures

Tables

Interactive Graphics

Video

Country-Specific Mortality and Growth Failure in Infancy and Yound Children and Association With Material Stature

Use interactive graphics and maps to view and sort country-specific infant and early dhildhood mortality and growth failure data and their association with maternal

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In