Full Content is available to subscribers

Subscribe/Learn More  >

Investigation of Contribution Ratio Between NBTI and HC Effects in PMOSFETs Under Deep-Submicron Process

[+] Author Affiliations
Mu-Chun Wang

National Taipei University of Technology, Taipei, Taiwan, R.O.C.; Ming Hsin University of Science & Technology, Hsin-Chu, Taiwan, R.O.C.

Zhen-Ying Hsieh, Shuang-Yuan Chen, Heng-Sheng Huang

National Taipei University of Technology, Taipei, Taiwan, R.O.C.

Paper No. MNC2007-21082, pp. 299-304; 6 pages
  • 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems
  • First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B
  • Sanya, Hainan, China, January 10–13, 2007
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4265-7 | eISBN: 0-7918-3794-7
  • Copyright © 2007 by ASME


Quantifying the contribution of the hot carrier effect (HCE) and the negative bias temperature instability (NBTI) effect in PMOSFET device reliability is an urgent target, especially as the dual poly-gate implantation and the novel oxide growth recipe is derived. At this stage, the PMOS gate-oxide thickness is thinner than before, therefore, the implanted boron or BF2 is possible to penetrate from poly gate to surface channel. Furthermore, the implant source contains the plenty ionized hydrogen. This material is easily to be trapped in the gate oxide or bonded with the surface-channel silicon. The amount of interface state concentration, Nit , or oxide trap concentration, Not , is increased. As a result, the threshold voltage of the PMOSFET will be shifted away from the design target. Therefore, the source/drain current will be influenced and this PMOSFET will usually exhibit an unstable state. In the worst case, the IC chip will fail or stop working. This negative bias temperature instability (NBTI) effect has the tremendous impact to the PMOSFET performance.

Copyright © 2007 by ASME



Interactive Graphics


Country-Specific Mortality and Growth Failure in Infancy and Yound Children and Association With Material Stature

Use interactive graphics and maps to view and sort country-specific infant and early dhildhood mortality and growth failure data and their association with maternal

Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In