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The Mechanism and Process of Anodic Bonding for Glass and Aluminium

[+] Author Affiliations
Qingsen Meng, Lifang Hu, Yude Li

Taiyuan University of Technology, Taiyuan, China

Cuirong Liu

Taiyuan University of Technology; Taiyuan University of Science and Technology, Taiyuan, China

Paper No. MNC2007-21046, pp. 265-271; 7 pages
doi:10.1115/MNC2007-21046
From:
  • 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems
  • First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B
  • Sanya, Hainan, China, January 10–13, 2007
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4265-7 | eISBN: 0-7918-3794-7
  • Copyright © 2007 by ASME

abstract

The work mainly investigates the bonding mechanism of the anodic bonding between glass and aluminium film, and bonding of multi-layers glass-Al stack is achieved by the common anode process. The SEM and EDS are applied to investigate the interfacial structure of Al-glass. The bonding area consists of glass, transitional layer and aluminium. The transitional layer is composed of Al2 O3 and SiO2 . The microstructure and distribution of the elements are almost the same in both sides of the Al interfaces. From the SEM micrographs a conclusion can be deduced that there is no difference between the bonding interface of the Al-glass and the glass-Al-glass. It is shown that the voltage and temperature are the main factors to influence the current, and the current would change a lot if the voltage or temperature is varied. According to the experimental results, if the voltage and temperature are given, the peak current of the glass-Al-glass bonding is two times larger than the Al-glass bonding. The pulling test machine (INSTRON-5544) is applied to take a tensile test for evaluation of bonding strength of the samples. And it is found that the broken occurs inside the glass not in the bonding interface. The fractures of the simples is analyzed by SEM, and the fractures morphology of the cleavage are similar to the surface of a shell, it indicates that the glass-Al-glass wafers can be bonded very well due to the applying of a common anode. And the bonding can be achieved at 350°C–450°C by applying a voltage of 400V-800V. Using the technique, five layers of glasses to aluminium films are also bonded together.

Copyright © 2007 by ASME

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