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Transient Thermoreflectance Measurement of Thermal Conductivity of Nanoscale Silicon Nitride Thin Films

[+] Author Affiliations
SuYuan Bai, ZhenAn Tang, ZhengXing Huang, JiaQi Wang

Dalian University of Technology, Dalian, China

Paper No. ICNMM2007-30087, pp. 457-460; 4 pages
doi:10.1115/ICNMM2007-30087
From:
  • ASME 2007 5th International Conference on Nanochannels, Microchannels, and Minichannels
  • ASME 5th International Conference on Nanochannels, Microchannels, and Minichannels
  • Puebla, Mexico, June 18–20, 2007
  • Conference Sponsors: Nanotechnology Institute
  • ISBN: 0-7918-4272-X | eISBN: 0-7918-3800-5
  • Copyright © 2007 by ASME

abstract

The present work measured the thermal conductivities of the silicon nitride films prepared by lower pressure chemical vapor deposition (LPCVD) with thicknesses ranging from 100 nm to 200 nm. The measurements were made at room temperature using the transient photothermal reflectance technique, which is a non-contacting and non-destructive optical approach. The data measured were fitted by genetic algorithm to get the thermal conductivity of thin films and interfacial thermal resistance simultaneously. The results show that thermal conductivities of these films are lower than corresponding bulk material values. The interfacial thermal resistances are in the order of 10−8 m2 K/W. It cannot be neglected for the very thin films. Some comparison and analysis for the results were discussed.

Copyright © 2007 by ASME

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