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Structural Comparison of CIGSS Thin Film Absorber Layer Fabricated on SS and Ti Substrates

[+] Author Affiliations
Ankur A. Kadam, Neelkanth G. Dhere

University of Central Florida, Cocoa, FL

Paper No. ISEC2005-76178, pp. 491-494; 4 pages
doi:10.1115/ISEC2005-76178
From:
  • ASME 2005 International Solar Energy Conference
  • Solar Energy
  • Orlando, Florida, USA, August 6–12, 2005
  • Conference Sponsors: Solar Energy Division
  • ISBN: 0-7918-4737-3 | eISBN: 0-7918-3765-3
  • Copyright © 2005 by ASME

abstract

Copper indium gallium selenide sulfide, CuIn1−x Gax Se2−y Sy (CIGSS) absorber layer was prepared on stainless steel (SS) and SiO2 -coated titanium substrates. Comparative study was carried out to analyze the variation in the crystal quality depending on the substrate. Identical parameters were used for deposition and selenization/sulfurization of metallic precursors. This paper presents the observations made on the basis of surface morphology using scanning electron microscopy, crystal quality by x-ray diffraction and chemical composition and concentration-depth profiles by x-ray energy dispersive spectroscopy and Auger electron spectroscopy respectively. Film fabricated on both the substrate had chalcopyrite structure with variation of stoichiometry as well as morphology. Selenization/sulfurization cycle must be modified depending upon the substrate to obtain high quality CIGSS film.

Copyright © 2005 by ASME

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