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Molecular Dynamics Simulation of Thermal Transport at Nanometer Size Point Contacts on a Planar Silicon Substrate

[+] Author Affiliations
Sanjoy Saha, Li Shi

University of Texas at Austin, Austin, TX

Paper No. HT2005-72308, pp. 389-396; 8 pages
  • ASME 2005 Summer Heat Transfer Conference collocated with the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems
  • Heat Transfer: Volume 1
  • San Francisco, California, USA, July 17–22, 2005
  • Conference Sponsors: Heat Transfer Division and Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4731-4 | eISBN: 0-7918-3762-9
  • Copyright © 2005 by ASME


A Non Equilibrium Molecular Dynamics (NEMD) simulation has been used to calculate the temperature distribution in the substrate side of a nanometer scale point contact on a planar silicon substrate with different doping concentrations and contact radii. The size of the non-uniform temperature zone was found to approach the average nearest-neighbor distance of impurity dopants when the contact radius was reduced below this distance. At a contact radius of 0.5 nm, the calculated spreading thermal resistance at the nano-point contact agrees with those obtained using two phonon transport models. At a contact radius between 1 nm and 6 nm, however, the spreading resistance from the NEMD is much larger than those from the two models that assume small deviation from the equilibrium distribution.

Copyright © 2005 by ASME



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