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Numerical Modeling of Si0.15Ge0.85 by the Traveling Solvent Method

[+] Author Affiliations
T. J. Makriyannis, M. Z. Saghir

Ryerson University, Toronto, ON, Canada

D. Labrie

Dalhousie University, Halifax, NS, Canada

Paper No. IMECE2002-33819, pp. 609-618; 10 pages
doi:10.1115/IMECE2002-33819
From:
  • ASME 2002 International Mechanical Engineering Congress and Exposition
  • Fluids Engineering
  • New Orleans, Louisiana, USA, November 17–22, 2002
  • Conference Sponsors: Fluids Engineering Division
  • ISBN: 0-7918-3657-6 | eISBN: 0-7918-1691-5, 0-7918-1692-3, 0-7918-1693-1
  • Copyright © 2002 by ASME

abstract

The traveling solvent method (TSM) is a relatively new and promising technique for the production of high quality semiconductors. TSM has been tested on many alloys producing pure and homogeneous crystals. In the present study the effect of buoyancy convection on the growth of the Si0.15 Ge0.85 crystal grown by the traveling solvent method is investigated under different heating conditions. The full Navier-Stokes equations together with the energy and solutal equations were solved numerically using the finite element technique. The model take into consideration the losses of heat by radiation and the use of the phase diagram to determine the silicon concentration at the growth interface. Results revealed a strong convection in the solvent, which in turn is detrimental to the growth uniformity in the crystal rod. Additional numerical results showed that the convective heat transfer significantly influences the solute distribution in the liquid zone and the growth rate increases substantially.

Copyright © 2002 by ASME

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