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Finite Element Analysis on Soft-Pad Grinding of Wire-Sawn Silicon Wafers

[+] Author Affiliations
X. J. Xin, Z. J. Pei, Wenjie Liu

Kansas State University, Manhattan, KS

Paper No. IMECE2002-39277, pp. 89-98; 10 pages
doi:10.1115/IMECE2002-39277
From:
  • ASME 2002 International Mechanical Engineering Congress and Exposition
  • Electronic and Photonic Packaging, Electrical Systems Design and Photonics, and Nanotechnology
  • New Orleans, Louisiana, USA, November 17–22, 2002
  • Conference Sponsors: Electronic and Photonic Packaging Division
  • ISBN: 0-7918-3648-7 | eISBN: 0-7918-1691-5, 0-7918-1692-3, 0-7918-1693-1
  • Copyright © 2002 by ASME

abstract

Silicon is the primary semiconductor material used to fabricate microchips. The quality of microchips depends directly on the quality of starting silicon wafers. A series of processes are required to manufacture high quality silicon wafers. Surface grinding is one of the processes used to flatten the wire-sawn wafers. A major issue in grinding of wire-sawn wafers is the reduction and elimination of wire-sawing induced waviness. Several approaches (namely, combination of grinding and lapping, reduced chuck vacuum, soft-pad, and wax mounting) have been proposed to address this issue. The results of finite element analysis modeling of these approaches have shown that soft-pad grinding is the most promising approach since it is very effective in reducing the waviness and very easy to be adopted to conventional grinding environment. This paper presents a study of finite element analysis on soft-pad grinding of wire-sawn silicon wafers, covering the mechanisms of waviness reduction and the effects of pad material properties.

Copyright © 2002 by ASME

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