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Locally Heated Low Temperature Wafer Level MEMS Packaging With Closed-Loop AuSn Solder-Lines

[+] Author Affiliations
Young Ho Seo, Tae Goo Kang, Young-Ho Cho

Korea Advanced Institute of Science and Technology, Daejeon, Korea

Seong-A. Kim, Geun Ho Kim, Jong Uk Bu

LG Electronics Institute of Technology

Paper No. IMECE2002-39267, pp. 33-37; 5 pages
doi:10.1115/IMECE2002-39267
From:
  • ASME 2002 International Mechanical Engineering Congress and Exposition
  • Electronic and Photonic Packaging, Electrical Systems Design and Photonics, and Nanotechnology
  • New Orleans, Louisiana, USA, November 17–22, 2002
  • Conference Sponsors: Electronic and Photonic Packaging Division
  • ISBN: 0-7918-3648-7 | eISBN: 0-7918-1691-5, 0-7918-1692-3, 0-7918-1693-1
  • Copyright © 2002 by ASME

abstract

In this paper, locally heated closed-loop AuSn solder-line bonding method was proposed and evaluated for a low-temperature, high strength, and hermetic MEMS packaging. We fabricated two different test specimens including substrate-heated specimen and locally heated specimen in order to verify the performance of locally heated method. In air tightness test, the substrate-heated specimen and locally heated specimen show the maximum leak rate of 13.5±9.8×10−10 mbar-l/s and 18.8±9.9×10−10 mbar-l/s with the same internal volume of 6.89±0.2×10−6 l, respectively. In the critical pressure test, any fracture was not found in the bonded specimens at applied pressure of 10±2bar. From these results, we approximately extracted the bonding strength of the proposed bonding process of 3.53±0.07MPa. By EDS (Energy Dispersive X-ray Spectrometer) analysis at bonded interface, we found that bonded interface (between AuSn solder and Ti/Au layer) of substrate-heated specimen was stronger than that of locally heated specimen.

Copyright © 2002 by ASME

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