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Size and Frequency of Defects in Silicon MEMS

[+] Author Affiliations
David A. LaVan

Massachusetts Institute of Technology, Cambridge, MA

B. L. Boyce, T. E. Buchheit

Sandia National Laboratories, Albuquerque, NM

Paper No. IMECE2002-32393, pp. 573-576; 4 pages
doi:10.1115/IMECE2002-32393
From:
  • ASME 2002 International Mechanical Engineering Congress and Exposition
  • Microelectromechanical Systems
  • New Orleans, Louisiana, USA, November 17–22, 2002
  • Conference Sponsors: Microelectromechanical Systems
  • ISBN: 0-7918-3642-8 | eISBN: 0-7918-1691-5, 0-7918-1692-3, 0-7918-1693-1
  • Copyright © 2002 by ASME

abstract

Mechanical testing of thin films for MEMS has progressed from a developmental stage to a point where validated techniques are used to study the behavior of devices and materials at a very fine scale. Tensile data covering a range of sizes and test techniques have been analyzed to examine the distribution of defects that would be responsible for the observed fracture strengths. For each sample, a critical defect size was calculated based on a published fracture toughness and a half-circular surface crack fracture toughness model. For polysilicon produced using the SUMMiT V process in the period 1998–1999, the calculated mean defect size was 115 nm. For polysilicon produced using the MUMPS process, the calculated mean defect size was 389 nm.

Copyright © 2002 by ASME

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