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Nanoscale Rapid Melting and Crystallization of Amorphous Silicon Thin Films

[+] Author Affiliations
A. Chimmalgi, D. J. Hwang, C. P. Griogoropoulos

University of California at Berkeley

Paper No. IMECE2005-82208, pp. 995-1000; 6 pages
doi:10.1115/IMECE2005-82208
From:
  • ASME 2005 International Mechanical Engineering Congress and Exposition
  • Heat Transfer, Part B
  • Orlando, Florida, USA, November 5 – 11, 2005
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 0-7918-4222-3 | eISBN: 0-7918-3769-6
  • Copyright © 2005 by ASME

abstract

Nanostructuring of thin films is gaining widespread importance owing to ever-increasing applications in a variety of fields. The current study details nanosecond laser-based rapid melting and crystallization of thin amorphous silicon (a-Si) films at the nanoscale. Two different near-field processing schemes were employed. In the first scheme, local field enhancement in the near-field of a SPM probe tip irradiated with nanosecond laser pulses was utilized. As a second approach, the laser beam was spatially confined by a cantilevered near field scanning microscope tip (NSOM) fiber tip. Details of various modification regimes produced as a result of the rapid a-Si melting and crystallization transformations that critically depend on the input laser fluence are presented. At one extreme corresponding to relatively high applied fluence, ablation area surrounded by a narrow melt region was observed. At the other extreme, where the incident laser energy density is much lower, single nanostructures with a lateral dimension of ~90 nm were defined. The ability to induce nucleation and produce single semiconductor nanostructures in a controlled fashion may be crucial in the field of nano-opto-electronics.

Copyright © 2005 by ASME

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