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A Simple Process for Lateral Single Crystal Silicon Nanowires

[+] Author Affiliations
Veljko Milanović

Adriatic Research Institute, Berkeley, CA

Lance Doherty

University of California at Berkeley, Berkeley, CA

Paper No. IMECE2002-33392, pp. 365-371; 7 pages
doi:10.1115/IMECE2002-33392
From:
  • ASME 2002 International Mechanical Engineering Congress and Exposition
  • Microelectromechanical Systems
  • New Orleans, Louisiana, USA, November 17–22, 2002
  • Conference Sponsors: Microelectromechanical Systems
  • ISBN: 0-7918-3642-8 | eISBN: 0-7918-1691-5, 0-7918-1692-3, 0-7918-1693-1
  • Copyright © 2002 by ASME

abstract

In a single-mask standard photolithography based process and a single etch step, lateral silicon nanowires are fabricated according to arbitrary layout and over a range of diameters and lengths. Nanowires with diameters from ∼20 nm and with lengths ranging from 2 μm to 100 μm were fabricated in direct contact with two silicon probing pads for measurement. These nanowires are electrically isolated in the silicon-on-insulator wafer device layer, and suspended over the substrate, thereby increasing thermal and electrical isolation. Because they are formed from single crystal silicon, minimal defects are expected. The addition of a polysilicon deposition and patterning further enhances the process by allowing coaxial silicon nanostructures.

Copyright © 2002 by ASME
Topics: Crystals , Nanowires , Silicon

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