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Nanosphere-Assisted Direct-Patterning of Silicon Carbide by a Nanosecond Pulsed Laser

[+] Author Affiliations
Arvind Battula, Senthil Theppakuttai, Shanchen Chen

University of Texas at Austin

Paper No. IMECE2005-82499, pp. 817-821; 5 pages
doi:10.1115/IMECE2005-82499
From:
  • ASME 2005 International Mechanical Engineering Congress and Exposition
  • Heat Transfer, Part B
  • Orlando, Florida, USA, November 5 – 11, 2005
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 0-7918-4222-3 | eISBN: 0-7918-3769-6
  • Copyright © 2005 by ASME

abstract

A strategy wherein the optical near-field enhancement between the spheres and substrate obtained by irradiating with laser beam is used for nano-patterning the hard-to-machine bulk silicon carbide (SiC). For this study a monolayer of silica (SiO2 ) spheres of 1.76 μm and 640 nm diameter are deposited on the SiC substrate and then irradiated with an Nd:YAG laser of wavelength 355 nm and 532 nm. Scanning electron microscope and atomic force microscope are used to characterize the features. It was found that the features obtained were having diameters around 150 to 450 nm and the depths varying from 70 to 220 nm.

Copyright © 2005 by ASME
Topics: Lasers , Silicon

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