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A Micromachined Magnetometer-Accelerometer

[+] Author Affiliations
Seungdo An, Kyung Soo Kim, Ji-Man Cho, HoJoon Park, Ghun Hahm

Samsung Electromechanics Company, Ltd., Suwon, Korea

Paper No. IMECE2002-33304, pp. 195-200; 6 pages
doi:10.1115/IMECE2002-33304
From:
  • ASME 2002 International Mechanical Engineering Congress and Exposition
  • Microelectromechanical Systems
  • New Orleans, Louisiana, USA, November 17–22, 2002
  • Conference Sponsors: Microelectromechanical Systems
  • ISBN: 0-7918-3642-8 | eISBN: 0-7918-1691-5, 0-7918-1692-3, 0-7918-1693-1
  • Copyright © 2002 by ASME

abstract

A new magnetometer-accelerometer is developed with the silicon micromachining. The application areas include the cellular phones providing the third generation (3G) mobile service, and 3D game devices. The structure with a current-flowing conductor changes the vibration amplitude due to the Lorentz force. Both the magnetic field and acceleration are detected from the capacitance change and separated into each signal by the modulated frequency difference in one microstructure. A new Samsung MEMS fabrication process is developed for this sensor. The process uses a silicon-on-glass (SOG) wafer, an inverted SOG wafer, and a gold-silicon eutectic bonding for the wafer-level hermetic packaging. The test shows the equivalent noise of 1.65 mg peak-to-peak (pp) acceleration and 70 μT pp magnetic flux density. The sensor performance is enough for the 10 degree electronic display of the orientation angle for the cellular phones and portable navigators.

Copyright © 2002 by ASME

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