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The Effects of Defects and Acoustic Impedance Mismatch on Heat Conduction in SiGe Based Superlattices

[+] Author Affiliations
Scott T. Huxtable, Alexis R. Abramson, Arun Majumdar

University of California at Berkeley, Berkeley, CA

Ali Shakouri

University of California at Santa Cruz, Santa Cruz, CA

Edward T. Croke

HRL Laboratories, LLC, Malibu, CA

Channing C. Ahn

California Institute of Technology, Pasadena, CA

Paper No. IMECE2002-39239, pp. 19-23; 5 pages
doi:10.1115/IMECE2002-39239
From:
  • ASME 2002 International Mechanical Engineering Congress and Exposition
  • Microelectromechanical Systems
  • New Orleans, Louisiana, USA, November 17–22, 2002
  • Conference Sponsors: Microelectromechanical Systems
  • ISBN: 0-7918-3642-8 | eISBN: 0-7918-1691-5, 0-7918-1692-3, 0-7918-1693-1
  • Copyright © 2002 by ASME

abstract

The cross-plane thermal conductivity of four Si/Ge, Si/Si0.4 Ge0.6 , and Si0.9 Ge0.1 /Si0.1 Ge0.9 superlattices was measured using the 3ω technique. All four superlattices were found to have thermal conductivity values between 1.8 and 3.5 W/m-K, which are below the values of typical Six Ge1−x alloys. The growth quality of these superlattices was evaluated qualitatively through the use of x-ray diffraction and transmission electron microscopy. These studies indicated that the superlattices contained a relatively high density of dislocations. The low thermal conductivity values are presumed to be due in large part to these dislocations.

Copyright © 2002 by ASME

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