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Simulation of Phonon Interfacial Transport in Strained Silicon-Germanium Heterostructures

[+] Author Affiliations
Wei Zhang, Timothy S. Fisher

Purdue University

Paper No. IMECE2005-80053, pp. 683-689; 7 pages
doi:10.1115/IMECE2005-80053
From:
  • ASME 2005 International Mechanical Engineering Congress and Exposition
  • Heat Transfer, Part A
  • Orlando, Florida, USA, November 5 – 11, 2005
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 0-7918-4221-5 | eISBN: 0-7918-3769-6
  • Copyright © 2005 by ASME

abstract

A nonequilibrium Green’s function (NEGF) method is used to simulate the phonon transport across a strained thin film between two semi-infinite contacts. The calculation of dynamical matrix, self-energy matrix and transmission function are discussed. Uncoupled Green’s functions are computed numerically using a block tridiagonal algorithm. The numerical role of the broadening constant is investigated. The bulk density of states in a single atomic chain is calculated and compares well with an analytical solution. The transmission function and thermal conductance across the thin film are evaluated for two different configurations (Ge-Si-Ge and Si-Ge-Si) and compared against homogeneous bulk systems (Si only and Ge only), indicating that heterogeneous interfaces reduce thermal conductance significantly.

Copyright © 2005 by ASME

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