0

Full Content is available to subscribers

Subscribe/Learn More  >

Time-Resolved Microscale Temperature Measurements of High-Power Semiconductor Lasers

[+] Author Affiliations
Paddy K. L. Chan, Amul D. Sathe, Kevin P. Pipe

University of Michigan

Jason J. Plant, Paul W. Juodawlkis

Massachusetts Institute of Technology

Paper No. IMECE2005-79766, pp. 657-662; 6 pages
doi:10.1115/IMECE2005-79766
From:
  • ASME 2005 International Mechanical Engineering Congress and Exposition
  • Heat Transfer, Part A
  • Orlando, Florida, USA, November 5 – 11, 2005
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 0-7918-4221-5 | eISBN: 0-7918-3769-6
  • Copyright © 2005 by ASME

abstract

Nonradiative recombination and other heat generation processes affect both the performance and lifetime characteristics of semiconductor diode lasers. This is especially true for high-power devices, where facet heating due to nonradiative recombination can lead to catastrophic optical damage (COD). Here we present for the first time temperature measurements of a semiconductor laser in which the surface temperature profile (and hence the current density profile) of the laser is measured as it evolves in time. The laser studied is a λ=1.55μm 1-cm-long InGaAsP/InP watt-class slab-coupled optical waveguide laser (SCOWL). The ridge width of the SCOWLs examined here is approximately 5 μm. Temperature measurements are taken using multiple microthermocouples with sizes less than 20μm. Surface temperature fluctuations in time are seen to be quite large, as high as 20% of the total temperature increase of the device. Time-resolved measurements allow us to see both positive correlation (in which the temperature rises at the same time across an area of the device) as well as negative correlation (in which part of the device gets hot at the same time as another part of the device gets cold). Negative correlations are likely due to facet heating processes which cause bandgap shrinkage and hence increased current flow to a facet, pulling current away from the center of the device. Time-resolved measurements of the surface temperature profile therefore show promise as a nondestructive method for characterizing the failure mechanisms of a laser, as facet damage over time is otherwise very difficult to measure before the COD runaway process destroys the device.

Copyright © 2005 by ASME

Figures

Tables

Interactive Graphics

Video

Country-Specific Mortality and Growth Failure in Infancy and Yound Children and Association With Material Stature

Use interactive graphics and maps to view and sort country-specific infant and early dhildhood mortality and growth failure data and their association with maternal

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In