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Growth Kinetics and Thermal Stress in AlN Bulk Crystal Growth

[+] Author Affiliations
Bei Wu, Ronghui Ma, Hui Zhang, Michael Dudley

State University of New York at Stony Brook, Stony Brook, NY

Raoul Schlesser, Zlatko Sitar

North Carolina State University, Raleigh, NC

Paper No. IMECE2002-33700, pp. 53-63; 11 pages
doi:10.1115/IMECE2002-33700
From:
  • ASME 2002 International Mechanical Engineering Congress and Exposition
  • Heat Transfer, Volume 5
  • New Orleans, Louisiana, USA, November 17–22, 2002
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 0-7918-3636-3 | eISBN: 0-7918-1691-5, 0-7918-1692-3, 0-7918-1693-1
  • Copyright © 2002 by ASME

abstract

Group III nitrides, such as GaN, AlN and InGaN, have attracted a lot of attention due to the development of blue-green and ultraviolet light emitting diodes (LEDs) and lasers. In this paper, an integrated model has developed based on the conservation of momentum, mass, chemical species and energy together with necessary boundary conditions that account for heterogeneous chemical reactions both at the source and seed surfaces. The simulation results have been compared with temperature measurements for different power levels and flow rates in a reactor specially designed for nitride crystal growth at NCSU. It is evident that the heat power level affects the entire temperature distribution greatly while the flow rate has minor effect on the temperature distribution. The results also show that the overall thermal stress level is higher than the critical resolved shear stress, which means thermal elastic stress can be a major source of dislocation density in the as-grown crystal. The stress level is strongly dependent on the temperature gradient in the as-grown crystal. Results are correlated well with defects showing in an X-ray topograph for the AlN wafer.

Copyright © 2002 by ASME

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