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Thermal System Design and Dislocation Reduction for Growth of Wide Bandgap Crystals

[+] Author Affiliations
R.-H. Ma, H. Zhang, M. Dudley

State University of New York at Stony Brook, Stony Brook, NY

V. Prasad

Florida International University, Miami, FL

Paper No. HT2003-47564, pp. 353-354; 2 pages
doi:10.1115/HT2003-47564
From:
  • ASME 2003 Heat Transfer Summer Conference
  • Heat Transfer: Volume 3
  • Las Vegas, Nevada, USA, July 21–23, 2003
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 0-7918-3695-9 | eISBN: 0-7918-3679-7
  • Copyright © 2003 by ASME

abstract

In SiC vapor growth, micropipes and dislocations that originate at the seed/boule interface can continuously propagate into the newly grown crystal. They adversely affect the quality of the crystals. The defect density can be reduced by the method of growing a large diameter crystal from a small seed through lateral growth under controlled thermal environment. In this paper, SiC growth processes with varying thermal conditions have been simulated. The effects of operational parameters such as axial and radial temperature gradients, and the presence of polycrystal are also investigated. The current finding can also help in the design of AlN/GaN growth system.

Copyright © 2003 by ASME

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