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Nano-Imprint Patterning of Nanowire Structures for Interconnect Study

[+] Author Affiliations
Bin Li, Anastassios Mavrokefalos, Jianhua Zhou, Li Shi, Paul S. Ho

University of Texas at Austin

Joshua Zide, Arthur C. Gossard

University of California at Santa Barbara

Paper No. IMECE2005-82644, pp. 433-437; 5 pages
doi:10.1115/IMECE2005-82644
From:
  • ASME 2005 International Mechanical Engineering Congress and Exposition
  • Electronic and Photonic Packaging, Electrical Systems Design and Photonics, and Nanotechnology
  • Orlando, Florida, USA, November 5 – 11, 2005
  • Conference Sponsors: Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4217-7 | eISBN: 0-7918-3769-6
  • Copyright © 2005 by ASME

abstract

A thermal nano-imprint method has been developed to pattern sub-40 nm polymer lines of Hydrogensilsesquioxane (HSQ) and electron beam resist ZEP 520A. The imprint template was the cross section surface of a selectively etched GaAs/AlGaAs heterostructure wafer. Silicon nanowires were formed using reactive ion etching (RIE) of a silicon-on-insulator wafer with the polymer nanolines as an etching mask. The obtained Si nanowires were well defined and continuous for a length up to hundreds of microns. Reaction of the silicon lines with a metal can lead to the formation of silicide interconnect lines, which is used to investigate the size effects on the transport and electromigration properties of interconnects for future microelectronics.

Copyright © 2005 by ASME
Topics: Nanowires

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