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Low-Temperature Sintering of Nanoscale Silver Pastes for High-Performance and Highly-Reliable Device Interconnection

[+] Author Affiliations
John G. Bai, Zach Z. Zhang, Jesus N. Calata, Guo-Quan Lu

Virginia Polytechnic Institute and State University

Paper No. IMECE2005-79187, pp. 415-424; 10 pages
  • ASME 2005 International Mechanical Engineering Congress and Exposition
  • Electronic and Photonic Packaging, Electrical Systems Design and Photonics, and Nanotechnology
  • Orlando, Florida, USA, November 5 – 11, 2005
  • Conference Sponsors: Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4217-7 | eISBN: 0-7918-3769-6
  • Copyright © 2005 by ASME


In this paper, we report our development on making of nanoscale silver pastes and their low-temperature sintering for semiconductor device interconnections. The nanoscale silver pastes were prepared by dispersing 30-nm silver powder under ultrasonic vibration and mechanical agitation in an organic vehicle. Sintering of the silver paste prints at 280°C for 10 minutes resulted in a density of ~80% in the air ambient. Some important properties of the low-temperature sintered silver include ~2.4 W/K-cm for thermal conductivity, ~3.8 × 10−6 Ω-cm for electrical resistivity, and ~9 GPa for the effective elastic modulus. SiC Schottky rectifiers attached to either silver- or gold-coated direct bond copper (DBC) substrates show low forward voltage drops. The silver joints do not contain large voids but rather uniformly distributed microscale pores. Die-shear tests showed that bonding strengths of the silver joints were around 21 MPa on the gold-coated DBC substrates and 38 MPa on the silver-coated DBC substrates, respectively. The latter is comparable to that of reflowed eutectic lead-tin solder joints. Based on the findings in this work, the low-temperature sintering of nanoscale silver pastes is promising to be a high performance and highly-reliable semiconductor device bonding solution for high power packages.

Copyright © 2005 by ASME



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