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Numerical Calculation of Sub-Micron Hot Spot in Si Devices

[+] Author Affiliations
Kazuyoshi Fushinobu, Hirohisa Maruyama

Tokyo Institute of Technology, Tokyo, Japan

Paper No. IPACK2003-35079, pp. 183-188; 6 pages
  • ASME 2003 International Electronic Packaging Technical Conference and Exhibition
  • 2003 International Electronic Packaging Technical Conference and Exhibition, Volume 2
  • Maui, Hawaii, USA, July 6–11, 2003
  • Conference Sponsors: Electronic and Photonic Packaging Division
  • ISBN: 0-7918-3690-8 | eISBN: 0-7918-3674-6
  • Copyright © 2003 by ASME


Numerical calculation of silicon MOSFET is performed. Conjugate nature of the thermal and electrical behavior in the device is considered, and the lattice temperatures is solved as well as the electron concentration and the electron temperature. The calculated results shows the importance of considering both the electron and lattice temperatures for device modeling; the electron temperature has a significant impact on the calculated electron concentration and the lattice temperature. Submicron local hot spot is observed in the device, and its characteristics are discussed.

Copyright © 2003 by ASME



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