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Quantitative In-Situ Measurement of Asperity Compression During Chemical Mechanical Planarization

[+] Author Affiliations
Caprice Gray, Daniel Apone, Chris Rogers, Vincent P. Manno

Tufts University, Medford, MA

Chris Barns, Mansour Moinpour

Intel Corporation, Santa Clara, CA

Sriram Anjur

Cabot Microelectronics Corporation, Aurora, IL

Ara Philipossian

University of Arizona, Tucson, AZ

Paper No. WTC2005-63805, pp. 425-426; 2 pages
doi:10.1115/WTC2005-63805
From:
  • World Tribology Congress III
  • World Tribology Congress III, Volume 2
  • Washington, D.C., USA, September 12–16, 2005
  • Conference Sponsors: Tribology Division
  • ISBN: 0-7918-4202-9 | eISBN: 0-7918-3767-X
  • Copyright © 2005 by ASME

abstract

Modifications to the Dual Emission Laser Induced Fluorescence (DELIF) procedure used to collect images of the slurry layer between the polishing pad and wafer during Chemical Mechanical Planarization (CMP) have provided a means to attain instantaneous, high spatial resolution images of slurry film thickness. Presented here is a technique to determine the calibration factor that correlates image intensity to slurry film thickness. This presentation will discuss how to determine slurry layer shape near wafer features, pad roughness, and pad compressibility.

Copyright © 2005 by ASME

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