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Experimental Characterization of Bonded Microcoolers for Hot Spot Removal

[+] Author Affiliations
Yan Zhang, Christine Hoffman, Ali Shakouri

University of California at Santa Cruz, Santa Cruz, CA

Gehong Zeng

University of California at Santa Barbara, Santa Barbara, CA

Peng Wang, Avram Bar-Cohen

University of Maryland, College Park, MD

Paper No. IPACK2005-73466, pp. 2189-2197; 9 pages
  • ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference
  • Advances in Electronic Packaging, Parts A, B, and C
  • San Francisco, California, USA, July 17–22, 2005
  • Conference Sponsors: Heat Transfer Division and Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4200-2 | eISBN: 0-7918-3762-9
  • Copyright © 2005 by ASME


In this paper we describe the experimental results of Si/SiGe superlattice microcoolers, which are used to cool the target hot spot on a 65μm-thick silicon substrate. The device areas under test range from 50×50 to 150×150 μm2 . We measured the cooling temperature at the hot spot region versus the current supplied to the microcooler, as well as the thermal resistance, and the cooling power density (CPD, also defined as heat flux — the flow of heat per unit area in W/cm2 ) of these devices. The experimental results show the maximum cooling at the hot spot region approaches 1°C for device area 150×150μm2 at 80°C, and CPD up to ∼110W/cm2 for device area 50×50×2 μm2 (two 50×50μm2 device array, as illustrated in Figure 3) at 80°C. The two-chip bonded configuration will allow the integration of spot coolers and integrated circuit chips with minimum impact on the processing of microelectronic devices. Key parameters limiting the cooling performance at the hot spots are also discussed.

Copyright © 2005 by ASME



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