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Reliability and Characterization of Micro-Packages in a Wafer Level Au-Si Eutectic Vacuum Bonding Process

[+] Author Affiliations
Jay S. Mitchell, Gholamhassan R. Lahiji, Khalil Najafi

University of Michigan, Ann Arbor, MI

Paper No. IPACK2005-73341, pp. 2041-2045; 5 pages
doi:10.1115/IPACK2005-73341
From:
  • ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference
  • Advances in Electronic Packaging, Parts A, B, and C
  • San Francisco, California, USA, July 17–22, 2005
  • Conference Sponsors: Heat Transfer Division and Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4200-2 | eISBN: 0-7918-3762-9
  • Copyright © 2005 by ASME

abstract

A Au-Si eutectic vacuum packaging process was evaluated using high sensitivity poly-Si Pirani vacuum sensors. Encapsulation of devices was achieved by bonding a silicon cap wafer to a device wafer using a Au-Si eutectic solder at above 390°C in a vacuum bonder. The Au-Si eutectic solder encircled the devices, providing an airtight seal. The Pirani gauges were encapsulated and tested over a period of several months in order to determine base pressures and leak/outgassing rates of the micro-cavities. Packaged devices without getters showed initial pressures from 2 to 12 Torr with initial leak/outgassing rates of −0.073 to 80 Torr/year. Using getters, pressures as low as 5 mTorr have been achieved with leak/outgassing rates of <10 mTorr/year. Trends in pressure over time seem to indicate outgassing (desorption of atoms from inside of the microcavity) as the primary mechanism for pressure change over time.

Copyright © 2005 by ASME

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