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Stress Concentration and Surface Roughness Effect on Strength of Polycrystalline Silicon Structure

[+] Author Affiliations
Shigeru Hamada, Shuichi Tani, Daisuke Katagiri, Masahiro Tsugai

Mitsubishi Electric Company, Amagasaki, Hyogo, Japan

Makio Horikawa, Hiroshi Otani

Mitsubishi Electric Company, Hyogo, Japan

Paper No. IPACK2005-73169, pp. 1929-1934; 6 pages
  • ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference
  • Advances in Electronic Packaging, Parts A, B, and C
  • San Francisco, California, USA, July 17–22, 2005
  • Conference Sponsors: Heat Transfer Division and Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4200-2 | eISBN: 0-7918-3762-9
  • Copyright © 2005 by ASME


In order to clarify the stress concentration and surface roughness effect on strength of the polycrystalline silicon (poly-Si) structure, bending tests of poly-Si microcantilever beam specimen and surface roughness measurement is performed. The bending test results are analyzed by means of maximum stress at the notch root calculated by FEM models, and it is found that this approach cannot describe the test results. Therefore, modified approach is taken into account by use of two parameters that are the maximum stress and area where stress is larger than 50% of the maximum stress, which indicates stress extension around the position of maximum stress representatively. By this two parameters approach, the test results are explained quantitatively and a strength design chart for stress concentration area of the poly-Si structure is obtained. On the other hand, relationship between strength and surface roughness are confirmed and useful information for the process quality control are obtained.

Copyright © 2005 by ASME



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