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A Rapid Method to Measure Thermal Conductivity of Dielectric Thin Films: Thermal Resistance Method

[+] Author Affiliations
Da-Jeng Yao

National Tsing Hua University, Hsinchu, Taiwan

Heng-Chieh Chien, Ming-Hsi Tseng

Industrial Technology Research Institute, Hsinchu, Taiwan

Paper No. IPACK2005-73350, pp. 1749-1753; 5 pages
  • ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference
  • Advances in Electronic Packaging, Parts A, B, and C
  • San Francisco, California, USA, July 17–22, 2005
  • Conference Sponsors: Heat Transfer Division and Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4200-2 | eISBN: 0-7918-3762-9
  • Copyright © 2005 by ASME


A new and relatively simple method, described for thermal conductivity measurement of dielectric thin films, is presented in this paper. This new technique, the thermal resistance method, can be applied to determine cross-plane thermal conductivity of thin film by electrical heating and sensing techniques without traditional free standing structure design. A slender metal line, deposited on top of dielectric film, is used to measure and extract thermal resistance (Rc ) of composite structure, including substrate and dielectric film. A 2-D analytical solution is derived to get thermal resistance (Rs ) of substrate. Therefore, the thermal resistance of thin film (Rf ) is calculated by subtracting Rs form Rc and thermal conductivity of thin film can also be extracted from thermal resistance. The measurement data of silicon dioxide with difference thickness are verified by using previous scientific literatures. In addition, the measuring results also show good agreement with those measured by 3 omega method. According to advantages of rather rapid and accuracy, this new technique has potential to develop to be an in-line test key for MEMS and IC relative industries.

Copyright © 2005 by ASME



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