Full Content is available to subscribers

Subscribe/Learn More  >

Electrical Simulation Design Technology of Silicon Through Substrate

[+] Author Affiliations
Takamasa Takano, Masataka Yamaguchi, Koichi Nakayama, Tomoko Maruyama, Shigeki Chujyo, Satoru Kuramochi

Dai Nippon Printing Company, Ltd., Kashiwa, Chiba, Japan

Yoshitaka Fukuoka

Worldwide Electronic Integrated Substrate Technology, Inc., Tokyo, Japan

Paper No. IPACK2005-73339, pp. 999-1004; 6 pages
  • ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference
  • Advances in Electronic Packaging, Parts A, B, and C
  • San Francisco, California, USA, July 17–22, 2005
  • Conference Sponsors: Heat Transfer Division and Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4200-2 | eISBN: 0-7918-3762-9
  • Copyright © 2005 by ASME


As electronic product becomes smaller and lighter with an increasing number of function, the demand for high density and high integration becomes stronger. In other aspect, IT (information technology) products supported on broadband network communication technologies. It changes from the cable communication by the digital circuit to the wire less communication by analogue and mixed-signal technologies. We have researched requirements for the design of next generation system in packaging module from the several points of view which include line width, pad pitch, clock, frequency, interconnection delay and number of passive components. Based on this, we presented a new concept packaging module model. The new module, silicon through integration platform, has through interconnection via, fine wiring build up layers, and embedded passives. This paper reports the result, which focus on the various electrical characteristics of silicon through substrate, and electrical simulation design technology for system in package. We have tried very accurate impedance matching design using 2D electromagnetic simulation and TDR (Time Domain Refrectometry) measurement technology. To investigate high frequency characteristic of hi-speed transmission line and silicon through interconnection, we have tried 3D electromagnetic simulation and VNA (vector network analyser) measurement. Thus, we have obtained good performance of high frequency transmission line and optimal design rule for system in package.

Copyright © 2005 by ASME
Topics: Simulation , Design , Silicon



Interactive Graphics


Country-Specific Mortality and Growth Failure in Infancy and Yound Children and Association With Material Stature

Use interactive graphics and maps to view and sort country-specific infant and early dhildhood mortality and growth failure data and their association with maternal

Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In