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Fabrication of Sub-Micron Silicon Vias by Deep Reactive Ion Etching

[+] Author Affiliations
Shawn X. D. Zhang, Ronald Hon, S. W. Ricky Lee

Hong Kong University of Science and Technology, Kowloon, Hong Kong

Paper No. IPACK2005-73299, pp. 947-953; 7 pages
doi:10.1115/IPACK2005-73299
From:
  • ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference
  • Advances in Electronic Packaging, Parts A, B, and C
  • San Francisco, California, USA, July 17–22, 2005
  • Conference Sponsors: Heat Transfer Division and Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4200-2 | eISBN: 0-7918-3762-9
  • Copyright © 2005 by ASME

abstract

Deep reactive ion etching (DRIE) is a major microfabrication process for micro-electro-mechanical system (MEMS) devices. In recent years DRIE is also applied to make through-silicon-vias (TSVs) for 3D packaging. Typical DRIE-formed TSVs are in the range of a few microns to tens of microns. In the present study, silicon vias with diameters in the sub-micron range (0.5 μm and 0.8 μm) are attempted. For comparison purposes, larger silicon vias (1 μm and 3 μm) are fabricated as well. In this paper, the microfabrication processes are described. The experimental results and comparisons in terms of via uniformity, aspect ratio dependent etching, undercutting, and effects of various mask materials are discussed in detail.

Copyright © 2005 by ASME

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