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Surface Activated Flip-Chip Bonding of Laser Chips

[+] Author Affiliations
Eiji Higurashi, Masao Nakagawa, Tadatomo Suga

University of Tokyo, Tokyo, Japan

Renshi Sawada

Kyushu University, Fukuoka, Japan

Paper No. IPACK2005-73436, pp. 793-796; 4 pages
doi:10.1115/IPACK2005-73436
From:
  • ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference
  • Advances in Electronic Packaging, Parts A, B, and C
  • San Francisco, California, USA, July 17–22, 2005
  • Conference Sponsors: Heat Transfer Division and Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4200-2 | eISBN: 0-7918-3762-9
  • Copyright © 2005 by ASME

abstract

This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

Copyright © 2005 by ASME
Topics: Lasers , Bonding , Flip-chip

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