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GaN Film Grown on Si Substrate for Monolithic Optical MEMS

[+] Author Affiliations
F.-R. Hu, K. Ochi, B.-S. Choi, Y. Kanamori, K. Hane

Tohoku University, Sendai, Japan

Paper No. IPACK2005-73130, pp. 747-750; 4 pages
doi:10.1115/IPACK2005-73130
From:
  • ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference
  • Advances in Electronic Packaging, Parts A, B, and C
  • San Francisco, California, USA, July 17–22, 2005
  • Conference Sponsors: Heat Transfer Division and Electronic and Photonic Packaging Division
  • ISBN: 0-7918-4200-2 | eISBN: 0-7918-3762-9
  • Copyright © 2005 by ASME

abstract

GaN is a new and powerful material for photonic devices such as light emitting and laser diodes. On the other hand, optical MEMS technology is attractive for miniaturizing several optical systems. We are studying GaN film grown on Si substrate for the optical MEMS application in order to fabricate monolithic structure. In this paper, the characteristics of GaN film grown on Si substrate by MBE are reported. The growth conditions of GaN layer on Si substrate are studied. The surface morphology of the grown GaN film is measured by electron microscopy and atomic force microscopy. Furthermore, a preliminary grating structure is fabricated for a MEMS application.

Copyright © 2005 by ASME

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