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RIE-Texturing of Industrial Multicrystalline Silicon Solar Cells

[+] Author Affiliations
Douglas S. Ruby

Sandia National Laboratories, Albuquerque, NM

Saleem Zaidi

Gratings, Inc., Albuquerque, NM

S. Narayanan

BP Solar, Frederick, MD

Satoshi Yamanaka

Ebara Solar, Inc., Belle Vernon, PA

Ruben Balanga

Shell Solar, Camarillo, CA

Paper No. ISEC2003-44003, pp. 399-403; 5 pages
doi:10.1115/ISEC2003-44003
From:
  • ASME 2003 International Solar Energy Conference
  • Solar Energy
  • Kohala Coast, Hawaii, USA, March 15–18, 2003
  • Conference Sponsors: Solar Energy Division
  • ISBN: 0-7918-3676-2 | eISBN: 0-7918-3664-9
  • Copyright © 2003 by ASME

abstract

We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.

Copyright © 2003 by ASME

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