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Simulation of Single-Event Failure in Power Diodes

[+] Author Affiliations
D. G. Walker, T. S. Fisher, A. M. Al-badri, R. D. Schrimpf

Vanderbilt University, Nashville, TN

Paper No. IMECE2002-32116, pp. 39-45; 7 pages
doi:10.1115/IMECE2002-32116
From:
  • ASME 2002 International Mechanical Engineering Congress and Exposition
  • Heat Transfer, Volume 7
  • New Orleans, Louisiana, USA, November 17–22, 2002
  • Conference Sponsors: Heat Transfer Division
  • ISBN: 0-7918-3638-X | eISBN: 0-7918-1691-5, 0-7918-1692-3, 0-7918-1693-1
  • Copyright © 2002 by ASME

abstract

Single-event burnout (SEB) is a catastrophic failure mechanism in power diodes that is initiated by the passage of a heavy ion through a diode in a current-blocking state. In this work, the physical mechanism responsible for device failure during SEB is investigated using transient, coupled electro-thermal, device simulations. For the first time, the effects of a thermal feedback mechanism have been examined and deemed crucial to predicting possible failure in power diodes. Results indicate that device failure is predicted for large blocking voltage near breakdown with a linear energy transfer (LET) of 30MeV/mg/cm2 only when thermal effects are included. However, without inclusion of the thermal model, no device failure is predicted. These results correspond to experimental observations better than any previous work.

Copyright © 2002 by ASME
Topics: Simulation , Failure

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