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A Nanoindentation-Based Microbridge Testing Method for Mechanical Characterization of Thin Films for MEMS Applications

[+] Author Affiliations
Zhiqiang Cao, Xin Zhang

Boston University

Tong-Yi Zhang

Hong Kong University of Science and Technology

Paper No. IMECE2005-80288, pp. 221-228; 8 pages
doi:10.1115/IMECE2005-80288
From:
  • ASME 2005 International Mechanical Engineering Congress and Exposition
  • Microelectromechanical Systems
  • Orlando, Florida, USA, November 5 – 11, 2005
  • Conference Sponsors: Microelectromechanical Systems Division
  • ISBN: 0-7918-4224-X | eISBN: 0-7918-3769-6
  • Copyright © 2005 by ASME

abstract

Plasma-enhanced chemical vapor deposited (PECVD) silane-based oxides (SiOx ) have been widely used in both microelectronics and MEMS (MicroElectroMechanical Systems) to form electrical and/or mechanical components. In this paper, a novel nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young’s modulus of PECVD SiOx films on silicon wafers. Theoretically, we considered both the substrate deformation and residual stress in the thin film and derived a closed formula of deflection versus load. The formula fitted the experimental curves almost perfectly, from which the residual stresses and Young’s modulus of the film were determined. Experimentally, freestanding microbridges made of PECVD SiOx films were fabricated using the silicon undercut bulk micromachining technique. The results showed that the as-deposited PECVD SiOx films had a residual stress of −155±17 MPa and a Young’s modulus of 74.8±3.3 GPa.

Copyright © 2005 by ASME

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